WMB025N06HG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Case: PDFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.7mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 92.6W
Drain current: 140A
Pulsed drain current: 560A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 72+ | 1.01 EUR |
| 87+ | 0.82 EUR |
| 92+ | 0.78 EUR |
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Technische Details WMB025N06HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W, Case: PDFN5060-8, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 68nC, On-state resistance: 2.7mΩ, Gate-source voltage: ±20V, Drain-source voltage: 60V, Power dissipation: 92.6W, Drain current: 140A, Pulsed drain current: 560A.