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WMB025N06HG4 WAYON



Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 140A
Power dissipation: 92.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 560A
Gate charge: 68nC
Kind of package: reel; tape
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Technische Details WMB025N06HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 140A; Idm: 560A; 92.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 140A, Power dissipation: 92.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 2.7mΩ, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: 560A, Gate charge: 68nC, Kind of package: reel; tape.