WMB034N06LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Pulsed drain current: 500A
Power dissipation: 89.2W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB034N06LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 79A; Idm: 500A; 89.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 79A, Pulsed drain current: 500A, Power dissipation: 89.2W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 73.5nC, Kind of channel: enhancement.