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WMB040N08HGS WAYON

Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 122.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 520A
Gate charge: 78.5nC

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Technische Details WMB040N08HGS WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 130A; Idm: 520A; 122.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 130A, Power dissipation: 122.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Kind of channel: enhancement, Kind of package: reel; tape, Pulsed drain current: 520A, Gate charge: 78.5nC.