WMB043N10LGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Case: PDFN5060-8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 131.6W
Polarisation: unipolar
Gate charge: 111.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Mounting: SMD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 66+ | 1.09 EUR |
| 82+ | 0.88 EUR |
| 86+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB043N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W, Case: PDFN5060-8, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 120A, On-state resistance: 4.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 131.6W, Polarisation: unipolar, Gate charge: 111.2nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 480A, Mounting: SMD.