WMB043N10LGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 131.6W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 111.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 65+ | 1.11 EUR |
| 82+ | 0.88 EUR |
| 87+ | 0.83 EUR |
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Technische Details WMB043N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 131.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 120A, Pulsed drain current: 480A, Power dissipation: 131.6W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 4.5mΩ, Mounting: SMD, Gate charge: 111.2nC, Kind of package: reel; tape, Kind of channel: enhancement.