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WMB060N08LG2

WMB060N08LG2 WAYON


Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8
Mounting: SMD
Pulsed drain current: 310A
Power dissipation: 96W
Gate charge: 45nC
Polarisation: unipolar
Drain current: 98A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 6mΩ
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Technische Details WMB060N08LG2 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 310A; 96W; PDFN5060-8, Mounting: SMD, Pulsed drain current: 310A, Power dissipation: 96W, Gate charge: 45nC, Polarisation: unipolar, Drain current: 98A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 6mΩ.