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WMB175N10LG4 WAYON

Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W
Mounting: SMD
Polarisation: unipolar
Drain current: 46A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN5060-8
On-state resistance: 17mΩ
Pulsed drain current: 184A
Power dissipation: 71.4W
Gate charge: 22.7nC

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Technische Details WMB175N10LG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 184A; 71.4W, Mounting: SMD, Polarisation: unipolar, Drain current: 46A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PDFN5060-8, On-state resistance: 17mΩ, Pulsed drain current: 184A, Power dissipation: 71.4W, Gate charge: 22.7nC.