WMB18N65EM WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 8.6A, Pulsed drain current: 43A, Power dissipation: 125W, Case: PDFN56, Gate-source voltage: ±30V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.