WMB240P10HG4 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -33A
Pulsed drain current: -212A
Power dissipation: 147W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 62+ | 1.16 EUR |
| 71+ | 1.02 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.9 EUR |
| 3000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMB240P10HG4 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -33A, Pulsed drain current: -212A, Power dissipation: 147W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 64.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMB240P10HG4 nach Preis ab 1.02 EUR bis 1.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMB240P10HG4 | Hersteller : WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -33A Pulsed drain current: -212A Power dissipation: 147W Case: PDFN5060-8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 64.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
|