
WMB56N04T1 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 35.7W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
219+ | 0.33 EUR |
265+ | 0.27 EUR |
334+ | 0.21 EUR |
355+ | 0.2 EUR |
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Technische Details WMB56N04T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 224A; 35.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 56A, Pulsed drain current: 224A, Power dissipation: 35.7W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 7.2mΩ, Mounting: SMD, Gate charge: 36nC, Kind of package: reel; tape, Kind of channel: enhancement.