WMJ18N50D1B WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 41+ | 1.76 EUR |
| 52+ | 1.4 EUR |
| 69+ | 1.04 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
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Technische Details WMJ18N50D1B WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 18A, Pulsed drain current: 72A, Power dissipation: 271W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.28Ω, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement.