WMJ30N65EM WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 16A, Pulsed drain current: 100A, Power dissipation: 210W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.16Ω, Mounting: THT, Gate charge: 42nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.