WMJ60N60EM WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 21.59 EUR |
| 8+ | 9.37 EUR |
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Technische Details WMJ60N60EM WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 36A, Pulsed drain current: 240A, Power dissipation: 403W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 60mΩ, Mounting: THT, Gate charge: 96nC, Kind of package: tube, Kind of channel: enhancement.