WMJ80N60EM WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 24.42 EUR |
| 4+ | 19.66 EUR |
| 10+ | 14.59 EUR |
| 30+ | 13.18 EUR |
| 120+ | 12.21 EUR |
| 300+ | 11.67 EUR |
| 900+ | 11.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMJ80N60EM WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W, Type of transistor: N-MOSFET, Technology: WMOS™ EM, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 48A, Pulsed drain current: 295A, Power dissipation: 430W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 43mΩ, Mounting: THT, Gate charge: 142nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ80N60EM nach Preis ab 14.59 EUR bis 24.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMJ80N60EM | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 295A Power dissipation: 430W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
|