WMJ80R260S WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 78A
Power dissipation: 227W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 78A
Power dissipation: 227W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details WMJ80R260S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 13A, Pulsed drain current: 78A, Power dissipation: 227W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 255mΩ, Mounting: THT, Gate charge: 39nC, Kind of package: tube, Kind of channel: enhancement.