WMJ90N65C4 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 29mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 22.04 EUR |
| 8+ | 9.38 EUR |
| 9+ | 8.87 EUR |
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Technische Details WMJ90N65C4 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 50A, Pulsed drain current: 295A, Power dissipation: 430W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 29mΩ, Mounting: THT, Gate charge: 142nC, Kind of package: tube, Kind of channel: enhancement.