WMJ90N65SR WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 183nC
Technology: WMOS™ SR
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 350A
Case: TO247-3
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.4 EUR |
| 10+ | 7.15 EUR |
| 120+ | 6.96 EUR |
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Technische Details WMJ90N65SR WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W, Mounting: THT, Drain-source voltage: 650V, Drain current: 60A, On-state resistance: 33mΩ, Type of transistor: N-MOSFET, Power dissipation: 460W, Polarisation: unipolar, Kind of package: tube, Gate charge: 183nC, Technology: WMOS™ SR, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 350A, Case: TO247-3.