WMJ90N65SR WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 350A
Drain-source voltage: 650V
Drain current: 60A
Gate charge: 183nC
On-state resistance: 33mΩ
Power dissipation: 460W
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Technology: WMOS™ SR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 350A
Drain-source voltage: 650V
Drain current: 60A
Gate charge: 183nC
On-state resistance: 33mΩ
Power dissipation: 460W
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Technology: WMOS™ SR
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.08 EUR |
| 10+ | 7.51 EUR |
| 11+ | 7.11 EUR |
| 120+ | 6.84 EUR |
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Technische Details WMJ90N65SR WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Pulsed drain current: 350A, Drain-source voltage: 650V, Drain current: 60A, Gate charge: 183nC, On-state resistance: 33mΩ, Power dissipation: 460W, Gate-source voltage: ±30V, Kind of package: tube, Case: TO247-3, Kind of channel: enhancement, Technology: WMOS™ SR.