
WMJ90N65SR WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
8+ | 9.02 EUR |
10+ | 7.55 EUR |
11+ | 7.14 EUR |
120+ | 6.86 EUR |
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Technische Details WMJ90N65SR WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W, Type of transistor: N-MOSFET, Technology: WMOS™ SR, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 60A, Pulsed drain current: 350A, Power dissipation: 460W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 33mΩ, Mounting: THT, Gate charge: 183nC, Kind of package: tube, Kind of channel: enhancement.