WMK028N08HGD WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 167A
Pulsed drain current: 668A
Power dissipation: 166.6W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 108.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
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Technische Details WMK028N08HGD WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 167A; Idm: 668A; 166.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 167A, Pulsed drain current: 668A, Power dissipation: 166.6W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 3.3mΩ, Mounting: THT, Gate charge: 108.2nC, Kind of package: tube, Kind of channel: enhancement.