WMK06N80M3 WAYON
Hersteller: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 251 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.72 EUR |
| 156+ | 0.46 EUR |
| 165+ | 0.43 EUR |
| 500+ | 0.42 EUR |
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Technische Details WMK06N80M3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 5A, Power dissipation: 50W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Heatsink thickness: 1.2...1.45mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMK06N80M3 nach Preis ab 0.43 EUR bis 1.06 EUR
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WMK06N80M3 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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