WMK53N65F2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ F2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ F2
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 19+ | 3.93 EUR |
| 20+ | 3.72 EUR |
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Technische Details WMK53N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 26A, Pulsed drain current: 90A, Power dissipation: 350W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 78mΩ, Mounting: THT, Gate charge: 58nC, Kind of package: tube, Kind of channel: enhancement, Technology: WMOS™ F2.