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WMK90R260S WAYON


Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 227W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO220-3
Anzahl je Verpackung: 1 Stücke
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Technische Details WMK90R260S WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 227W, Mounting: THT, Drain-source voltage: 900V, Drain current: 10A, On-state resistance: 0.26Ω, Type of transistor: N-MOSFET, Power dissipation: 227W, Polarisation: unipolar, Kind of package: tube, Gate charge: 39.5nC, Technology: WMOS™ S, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 50A, Case: TO220-3, Anzahl je Verpackung: 1 Stücke.

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WMK90R260S Hersteller : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 227W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO220-3
Produkt ist nicht verfügbar