
WML10N80D1B WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 33nC
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
95+ | 0.76 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
250+ | 0.6 EUR |
500+ | 0.58 EUR |
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Technische Details WML10N80D1B WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10A, Power dissipation: 62.5W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 910mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 40A, Gate charge: 33nC.