Produkte > WAYON > WML13N65EM

WML13N65EM WAYON



Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W
Mounting: THT
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220FP
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 31W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
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Technische Details WML13N65EM WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 31W, Mounting: THT, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: tube, Case: TO220FP, On-state resistance: 390mΩ, Pulsed drain current: 35A, Power dissipation: 31W, Gate charge: 20.3nC, Polarisation: unipolar, Technology: WMOS™ EM, Drain current: 6.5A, Kind of channel: enhancement, Drain-source voltage: 650V.