WML26N65C4 WAYON
Hersteller: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 40+ | 1.79 EUR |
| 46+ | 1.57 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.37 EUR |
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Technische Details WML26N65C4 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 135W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Heatsink thickness: 1.2...1.45mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WML26N65C4 nach Preis ab 1.43 EUR bis 1.99 EUR
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WML26N65C4 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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