WML3N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 41W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 66+ | 1.09 EUR |
| 75+ | 0.96 EUR |
| 120+ | 0.86 EUR |
| 300+ | 0.83 EUR |
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Technische Details WML3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W, Case: TO220FP, Mounting: THT, Kind of package: tube, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 40nC, On-state resistance: 5.7Ω, Drain current: 3A, Pulsed drain current: 12A, Gate-source voltage: ±30V, Power dissipation: 41W, Drain-source voltage: 1.5kV, Kind of channel: enhancement, Technology: WMOS™ D1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WML3N150D1 nach Preis ab 0.86 EUR bis 1.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| WML3N150D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 41W Case: TO220FP Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 41W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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