WML6N90D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 50W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 76+ | 0.95 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
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Technische Details WML6N90D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 50W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 6A, Pulsed drain current: 24A, Power dissipation: 50W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 1.7Ω, Mounting: THT, Gate charge: 86.2nC, Kind of package: tube, Kind of channel: enhancement.