WMM020N10HGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 26+ | 2.85 EUR |
| 31+ | 2.33 EUR |
| 33+ | 2.2 EUR |
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Technische Details WMM020N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 280A, Pulsed drain current: 1120A, Power dissipation: 390.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 2.2mΩ, Mounting: SMD, Gate charge: 255nC, Kind of package: reel; tape, Kind of channel: enhancement.