WMM020N10HGS WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 2.2mΩ
Power dissipation: 390.6W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Case: TO263
Kind of channel: enhancement
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 26+ | 2.77 EUR |
| 30+ | 2.43 EUR |
| 100+ | 2.19 EUR |
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Technische Details WMM020N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 255nC, On-state resistance: 2.2mΩ, Power dissipation: 390.6W, Gate-source voltage: ±20V, Drain-source voltage: 100V, Drain current: 280A, Pulsed drain current: 1120A, Case: TO263, Kind of channel: enhancement.