WMM020N10HGS WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 280A
Pulsed drain current: 1120A
Power dissipation: 390.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.89 EUR |
| 27+ | 2.73 EUR |
| 30+ | 2.4 EUR |
| 100+ | 2.16 EUR |
| 800+ | 2.09 EUR |
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Technische Details WMM020N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 280A, Pulsed drain current: 1120A, Power dissipation: 390.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 2.2mΩ, Mounting: SMD, Gate charge: 255nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMM020N10HGS nach Preis ab 2.16 EUR bis 2.89 EUR
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WMM020N10HGS | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 280A; Idm: 1120A; 390.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 390.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 255nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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