WMM037N10HGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170A; Idm: 680A; 258.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Pulsed drain current: 680A
Power dissipation: 258.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 86.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170A; Idm: 680A; 258.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Pulsed drain current: 680A
Power dissipation: 258.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 86.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
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Technische Details WMM037N10HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 170A; Idm: 680A; 258.6W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 170A, Pulsed drain current: 680A, Power dissipation: 258.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 3.7mΩ, Mounting: SMD, Gate charge: 86.5nC, Kind of package: reel; tape, Kind of channel: enhancement.