Suchergebnisse für "wmm043n10hgs" : 1
Art der Ansicht :
Mindestbestellmenge: 62
Im Einkaufswagen
Stück im Wert von UAH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WMM043N10HGS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 145A Pulsed drain current: 580A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 98.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMM043N10HGS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 145A; Idm: 580A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 145A
Pulsed drain current: 580A
Power dissipation: 208W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 98.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 66+ | 1.08 EUR |
| 79+ | 0.92 EUR |
| 83+ | 0.87 EUR |