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WMM130N20JN WAYON

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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 188nC
Reverse recovery time: 196ns
On-state resistance: 5.2mΩ
Power dissipation: 416W
Drain current: 117A
Drain-source voltage: 200V
Pulsed drain current: 620A
Kind of package: reel; tape

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Technische Details WMM130N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263, Case: TO263, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: ±20V, Gate charge: 188nC, Reverse recovery time: 196ns, On-state resistance: 5.2mΩ, Power dissipation: 416W, Drain current: 117A, Drain-source voltage: 200V, Pulsed drain current: 620A, Kind of package: reel; tape.