WMM20N20JN WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263
Case: TO263
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 128+ | 0.56 EUR |
| 142+ | 0.5 EUR |
| 200+ | 0.44 EUR |
| 400+ | 0.4 EUR |
| 800+ | 0.38 EUR |
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Technische Details WMM20N20JN WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263, Case: TO263, Mounting: SMD, Gate-source voltage: ±20V, Gate charge: 4.1nC, Reverse recovery time: 110ns, On-state resistance: 80mΩ, Drain current: 12A, Power dissipation: 59W, Pulsed drain current: 60A, Drain-source voltage: 200V, Kind of package: reel; tape, Kind of channel: enhancement, Polarisation: unipolar, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMM20N20JN nach Preis ab 0.4 EUR bis 0.83 EUR
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| WMM20N20JN | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263 Case: TO263 Mounting: SMD Gate-source voltage: ±20V Gate charge: 4.1nC Reverse recovery time: 110ns On-state resistance: 80mΩ Drain current: 12A Power dissipation: 59W Pulsed drain current: 60A Drain-source voltage: 200V Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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