Produkte > WAYON > WMM20N20JN

WMM20N20JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD097CAE8F945CEA0E1&compId=WMx20N20JN.pdf?ci_sign=e7d89bf9d1f1284debcba6443db31cc2b39e3d0b Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Pulsed drain current: 60A
Power dissipation: 59W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 110ns
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Technische Details WMM20N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 12A, Pulsed drain current: 60A, Power dissipation: 59W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 80mΩ, Mounting: SMD, Gate charge: 4.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 110ns.