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WMM20N20JN WAYON

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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263
Case: TO263
Mounting: SMD
Reverse recovery time: 196ns
Drain-source voltage: 200V
Drain current: 117A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 416W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 188nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 620A

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Technische Details WMM20N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 416W; TO263, Case: TO263, Mounting: SMD, Reverse recovery time: 196ns, Drain-source voltage: 200V, Drain current: 117A, On-state resistance: 5.2mΩ, Type of transistor: N-MOSFET, Power dissipation: 416W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 188nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 620A.