Produkte > WAYON > WMM20N20JN

WMM20N20JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD097CAE8F945CEA0E1&compId=WMx20N20JN.pdf?ci_sign=e7d89bf9d1f1284debcba6443db31cc2b39e3d0b Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263
Power dissipation: 59W
Mounting: SMD
Kind of package: reel; tape
Case: TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 200V
auf Bestellung 600 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
121+0.59 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WMM20N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO263, Power dissipation: 59W, Mounting: SMD, Kind of package: reel; tape, Case: TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 4.1nC, Reverse recovery time: 110ns, On-state resistance: 80mΩ, Drain current: 12A, Gate-source voltage: ±20V, Pulsed drain current: 60A, Drain-source voltage: 200V.