WMM26N60C4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 780 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 35+ | 2.07 EUR |
| 41+ | 1.74 EUR |
| 46+ | 1.57 EUR |
| 100+ | 1.44 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMM26N60C4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 135W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMM26N60C4 nach Preis ab 1.29 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMM26N60C4 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
|