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WMM30N80M3 WAYON


Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; Idm: 96A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WMM30N80M3 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; Idm: 96A; 277W, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 15A, Pulsed drain current: 96A, Power dissipation: 277W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 0.195Ω, Mounting: SMD, Gate charge: 60nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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WMM30N80M3 Hersteller : WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; Idm: 96A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 277W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar