
WMMB015N08HGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 238nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 358A
Power dissipation: 347.2W
Pulsed drain current: 1432A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 238nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 358A
Power dissipation: 347.2W
Pulsed drain current: 1432A
Kind of package: reel; tape
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
25+ | 2.97 EUR |
31+ | 2.35 EUR |
33+ | 2.22 EUR |
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Technische Details WMMB015N08HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: TO263-7, Polarisation: unipolar, Gate-source voltage: ±20V, Gate charge: 238nC, On-state resistance: 1.5mΩ, Drain-source voltage: 80V, Drain current: 358A, Power dissipation: 347.2W, Pulsed drain current: 1432A, Kind of package: reel; tape.