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WMMB015N08HGS

WMMB015N08HGS WAYON


Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Case: TO263-7
Mounting: SMD
Pulsed drain current: 1432A
Power dissipation: 347.2W
Gate charge: 238nC
Polarisation: unipolar
Drain current: 358A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 1.5mΩ
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Technische Details WMMB015N08HGS WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W, Case: TO263-7, Mounting: SMD, Pulsed drain current: 1432A, Power dissipation: 347.2W, Gate charge: 238nC, Polarisation: unipolar, Drain current: 358A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 1.5mΩ.