WMMB015N08HGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 358A
Pulsed drain current: 1432A
Power dissipation: 347.2W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 3.16 EUR |
| 24+ | 3.02 EUR |
| 31+ | 2.35 EUR |
| 33+ | 2.22 EUR |
| 1600+ | 2.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMMB015N08HGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 358A, Pulsed drain current: 1432A, Power dissipation: 347.2W, Case: TO263-7, Gate-source voltage: ±20V, On-state resistance: 1.5mΩ, Mounting: SMD, Gate charge: 238nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMMB015N08HGS nach Preis ab 2.22 EUR bis 3.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMMB015N08HGS | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 358A; Idm: 1432A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 358A Pulsed drain current: 1432A Power dissipation: 347.2W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
|