WMMB020N10HG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 238A
Pulsed drain current: 952A
Power dissipation: 277.8W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 123.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 30+ | 2.46 EUR |
| 33+ | 2.17 EUR |
| 100+ | 1.94 EUR |
| 800+ | 1.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMMB020N10HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 238A, Pulsed drain current: 952A, Power dissipation: 277.8W, Case: TO263-7, Gate-source voltage: ±20V, On-state resistance: 2.5mΩ, Mounting: SMD, Gate charge: 123.4nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMMB020N10HG4 nach Preis ab 1.94 EUR bis 2.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMMB020N10HG4 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 238A Pulsed drain current: 952A Power dissipation: 277.8W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 123.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
|