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WMN12N80M3

WMN12N80M3 WAYON

WMx12N80M3.pdf Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
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Technische Details WMN12N80M3 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262, Case: TO262, Mounting: THT, Kind of package: tube, On-state resistance: 620mΩ, Drain current: 12A, Power dissipation: 86W, Gate-source voltage: ±30V, Drain-source voltage: 800V, Kind of channel: enhancement, Technology: WMOS™ M3, Type of transistor: N-MOSFET, Polarisation: unipolar.