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WMN13N80M3

WMN13N80M3 WAYON

WMx13N80M3.pdf
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO262
Kind of package: tube
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO262
On-state resistance: 0.48Ω
Mounting: THT
Power dissipation: 130W
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Technische Details WMN13N80M3 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO262, Kind of package: tube, Polarisation: unipolar, Technology: WMOS™ M3, Drain current: 13A, Kind of channel: enhancement, Drain-source voltage: 800V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Case: TO262, On-state resistance: 0.48Ω, Mounting: THT, Power dissipation: 130W.