Suchergebnisse für "wmo09n20dm" : 2
Art der Ansicht :
Mindestbestellmenge: 125
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 125
Im Einkaufswagen
Stück im Wert von UAH
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WMO09N20DM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 36A Power dissipation: 80W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 41.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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WMO09N20DMH | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 36A Power dissipation: 80.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 19.1nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMO09N20DM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 240+ | 0.3 EUR |
| 266+ | 0.27 EUR |
| 290+ | 0.24 EUR |
| WMO09N20DMH |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 237+ | 0.3 EUR |
| 264+ | 0.27 EUR |
| 294+ | 0.24 EUR |