WMO09N20DM WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 240+ | 0.3 EUR |
| 266+ | 0.27 EUR |
| 290+ | 0.24 EUR |
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Technische Details WMO09N20DM WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 9A, Pulsed drain current: 36A, Power dissipation: 80W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.3Ω, Mounting: SMD, Gate charge: 41.3nC, Kind of package: reel; tape, Kind of channel: enhancement.