WMO11N65C4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Mounting: SMD
Pulsed drain current: 19A
Power dissipation: 57W
Gate charge: 2.1nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 4.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO252
On-state resistance: 0.56Ω
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Technische Details WMO11N65C4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W, Mounting: SMD, Pulsed drain current: 19A, Power dissipation: 57W, Gate charge: 2.1nC, Polarisation: unipolar, Technology: WMOS™ C4, Drain current: 4.8A, Kind of channel: enhancement, Drain-source voltage: 650V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: reel; tape, Case: TO252, On-state resistance: 0.56Ω.

