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WMO12P06TS WAYON



Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4557 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
125+0.57 EUR
350+0.2 EUR
443+0.16 EUR
468+0.15 EUR
527+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 125 Stücke
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Technische Details WMO12P06TS WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -20A, Pulsed drain current: -80A, Power dissipation: 62.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.11Ω, Mounting: SMD, Gate charge: 21.5nC, Kind of package: reel; tape, Kind of channel: enhancement.