Produkte > WAYON > WMO175N10HG4
WMO175N10HG4

WMO175N10HG4 WAYON


Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
139+0.51 EUR
155+0.46 EUR
191+0.38 EUR
200+0.36 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details WMO175N10HG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 45A, Pulsed drain current: 180A, Power dissipation: 67.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement.