WMO175N10LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Pulsed drain current: 180A
Power dissipation: 67.5W
Gate charge: 22.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 17mΩ
Mounting: SMD
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Technische Details WMO175N10LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252, Pulsed drain current: 180A, Power dissipation: 67.5W, Gate charge: 22.5nC, Polarisation: unipolar, Drain current: 45A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: TO252, On-state resistance: 17mΩ, Mounting: SMD.

