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WMO18N20JN WAYON

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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Drain current: 7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Reverse recovery time: 80ns
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 200V
Pulsed drain current: 39A

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Technische Details WMO18N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns, Case: TO252, Mounting: SMD, Drain current: 7A, On-state resistance: 135mΩ, Type of transistor: N-MOSFET, Reverse recovery time: 80ns, Power dissipation: 36W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7.2nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Drain-source voltage: 200V, Pulsed drain current: 39A.