WMO30P03TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 349 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 248+ | 0.29 EUR |
| 329+ | 0.22 EUR |
| 349+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMO30P03TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 24W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 15.5mΩ, Mounting: SMD, Gate charge: 20.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMO30P03TS nach Preis ab 0.2 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMO30P03TS | Hersteller : WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 24W Case: TO252 Gate-source voltage: ±20V On-state resistance: 15.5mΩ Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
|