WMQ10N10TS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 265+ | 0.27 EUR |
| 317+ | 0.23 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
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Technische Details WMQ10N10TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 20W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Gate charge: 20.6nC, Kind of package: reel; tape, Kind of channel: enhancement.