WMQ175N10LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
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Technische Details WMQ175N10LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 43A, Pulsed drain current: 172A, Power dissipation: 65.8W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 22.7nC, Kind of package: reel; tape, Kind of channel: enhancement.