WMQ30DN04TS WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 112A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 188+ | 0.38 EUR |
| 230+ | 0.31 EUR |
| 291+ | 0.25 EUR |
| 309+ | 0.23 EUR |
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Technische Details WMQ30DN04TS WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 28A, Pulsed drain current: 112A, Power dissipation: 18.4W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 14.5mΩ, Mounting: SMD, Gate charge: 26nC, Kind of package: reel; tape, Kind of channel: enhancement.