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WMQ30P03T1

WMQ30P03T1 WAYON



Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 483 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
283+0.25 EUR
338+0.21 EUR
355+0.2 EUR
Mindestbestellmenge: 112
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Technische Details WMQ30P03T1 WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 29.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.