WMQ30P03T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 291+ | 0.25 EUR |
| 348+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 463+ | 0.15 EUR |
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Technische Details WMQ30P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 29.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.