WMQ40DN03T1 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WMQ40DN03T1 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 40A, Pulsed drain current: 160A, Power dissipation: 28.4W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 9.5nC, Kind of package: reel; tape, Kind of channel: enhancement.