WMR13N03T1 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 266+ | 0.27 EUR |
| 319+ | 0.22 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
| 12000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMR13N03T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 12.5A, Pulsed drain current: 50A, Power dissipation: 2.1W, Case: DFN2020-6, Gate-source voltage: ±12V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 10nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMR13N03T1 nach Preis ab 0.16 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMR13N03T1 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 50A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 11mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
|