WMS05P04TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 332+ | 0.22 EUR |
| 551+ | 0.13 EUR |
| 612+ | 0.12 EUR |
| 751+ | 0.095 EUR |
| 795+ | 0.09 EUR |
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Technische Details WMS05P04TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -5A, Pulsed drain current: -20A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 80mΩ, Mounting: SMD, Gate charge: 11.8nC, Kind of package: reel; tape, Kind of channel: enhancement.